SK hynix Inc.’s new 321-layer NAND flash reminiscence chips (PHOTO NOT FOR SALE) (Yonhap)
SK hynix mentioned Thursday it has began mass manufacturing of the business’s first triple-level cell-based 321-layer NAND flash reminiscence chips.
NAND flash reminiscence is a non-volatile reminiscence storage medium broadly utilized in reminiscence playing cards, USB drives, solid-state drives (SSDs), and smartphones for basic storage and information switch. It stacks reminiscence cells vertically and is categorized into single-, multi-, triple-, and quadruple-level cells.
SK hynix introduced that it has turn into the world’s first provider of NAND flash reminiscence with greater than 300 layers, constructing on the success of its 238-layer product, which entered mass manufacturing in June 2023.
The corporate plans to start delivering the 321-layer merchandise to prospects within the first half of subsequent yr.
SK hynix mentioned the newest growth brings it a step nearer to changing into the chief of the AI storage market, represented by SSDs for AI information facilities and on-device AI. (Yonhap)
